Effects of carrier-substrate type on resistive and optical properties of AlGaAs/GaInAs light-emitting infrared diodes

Investigations of various designs of light-emitting infrared (840 nm) diodes based on AlGaAs/GaInAs heterostructures with multiple quantum wells, grown by metalorganic vapor-phase epitaxy, have been carried out. The decrease of optical radiation losses in light-emitting diodes has been achieved by including multilayer combined reflectors into the design by transferring thin layers of the heterostructure onto a carrier-substrate based on a semiconductor material (Si, GaAs) or metal (Cu, Au). Analyzed was the influence of device designs on the light-emitting diodes characteristics. Maximum efficiency values of 46% at a current density of 10–20 A/cm$^2$ were achieved in devices on a GaAs carrier-substrate. The decrease of resistive losses and increase of optical power up to 730 mW at an operating current of 1.2 A were achieved in devices on a metal currier-substrate.