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Zhurnal Tekhnicheskoi Fiziki, 2026 Volume 96, Issue 3, Pages 591–601 (Mi jtf9685)

Physical electronics

Influence of ammonium iodide precursor on the structures and lifetime of charge carriers in the lead sulfide photosensitive elements

K. S. Makarukab, B. N. Miroshnikova, A. D. Barinova, A. I. Popova, I. N. Miroshnikovaa, T. D. Patsaevc, A. L. Vasil'evc, A. V. Goryachevb, L. N. Maskaevade

a National Research University "Moscow Power Engineering Institute"
b Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences
c National Research Centre "Kurchatov Institute", Moscow
d Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
e Ural Institute of the State Fire Service

Abstract: The structure and characteristics of photosensitive elements based on thin films of lead sulfide (PbS) were studied. The films were prepared by chemical precipitation in the presence of a precursor (ammonium iodide (NH$_4$I)) in different molar concentrations. It has been established that iodine and its compounds (formed at an early stage of thin film deposition) lead to a change in the formation mechanism of the material structure. In turn, this leads to a decrease in the thickness of the oxygen-containing layers between the crystallites and has a decisive influence on the increase in the mobility of charge carriers. It is shown that the increase in photosensitivity at low frequencies (up to 800 Hz) is associated with the formation of oxygen-containing compositions and the appearance of a second group of charge carriers with lifetimes of 860–930 $\mu$s.

Keywords: thin films, structure, lead sulfide, chemical deposition method, photosensitive elements, photoelectric parameters, relaxation time.

Received: 14.07.2025
Revised: 23.10.2025
Accepted: 13.11.2025

DOI: 10.61011/JTF.2026.03.62544.181-25



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© Steklov Math. Inst. of RAS, 2026