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// Zhurnal Tekhnicheskoi Fiziki
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Zhurnal Tekhnicheskoi Fiziki,
2026
Volume 96,
Issue 4,
Pages
816–823
(Mi jtf9930)
Physical electronics
Структурные изменения и глубинное перераспределение имплантированных примесей In и As в Si при стационарной и импульсной термообработке
R. I. Batalov
a
,
V. V. Bazarov
a
,
E. M. Begishev
a
,
V. F. Valeev
a
,
V. I. Nuzhdin
a
,
F. F. Komarov
b
,
I. K. Chupris
b
a
Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences
b
A. N. Sevchenko Research Institute of Applied Physical Problems, Belarusian State University, Minsk
Received:
21.11.2025
Revised:
10.12.2025
Accepted:
15.12.2025
DOI:
10.61011/JTF.2026.04.62670.318-25
Fulltext:
PDF file (532 kB)
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Steklov Math. Inst. of RAS
, 2026