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Zhurnal Tekhnicheskoi Fiziki, 2009 Volume 79, Issue 11, Pages 150–152 (Mi jtf9994)

Brief Communications

Simultaneous generation of $TE_0$- and $TE_1$ modes with different wavelengths in a semiconducting laser diode

V. Ya. Aleshkina, A. A. Biryukovb, A. A. Dubinova, B. N. Zvonkovb, S. M. Nekorkinb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: A semiconducting laser diode with an original waveguide structure containing two quantum wells and simultaneously generating the $TE_0$- and $TE_1$ modes with wavelengths 1.05 and 0.90 $\mu$m, respectively, at liquid nitrogen temperature is developed on the basis of the InGaAs/GaAs/InGaP heterostructure.

Received: 03.12.2008


 English version:
Technical Physics, 2009, 54:11, 1711–1713

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