V. V. Malov, T. Ghosh, V. C. Nair, M. M. Maslov, K. P. Katin, K. N. Unni, A. R. Tameev, “Hole mobility in thieno[3,2-<i>b</i>]thiophene oligomers”, Mendeleev Commun., 2019, Volume 29, Issue 2,Pages <nobr>218

This article is cited in 25 papers

Communications

Hole mobility in thieno[3,2-b]thiophene oligomers

V. V. Malov^a, T. Ghosh^bc, V. C. Nair^bc, M. M. Maslov^d, K. P. Katin^d, K. N. Unni^bc, A. R. Tameev^a

^a A.N. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, Moscow, Russian Federation
^b Academy of Scientific and Innovative Research (AcSIR), Thiruvananthapuram, India
^c Photosciences and Photonics Section, CSIR-National Institute for Interdisciplinary Science and Technology (NIIST), Thiruvananthapuram, India
^d National Research Nuclear University MEPhI, Moscow, Russian Federation

Abstract: A study of transient and steady state electrical currents in the solution-processed thin films of thieno[3,2-b]thiophene oligomers has demonstrated charge carrier mobility of about 10⁻²cm²V⁻¹s⁻¹. Thieno[3,2-b]thiophene moieties serve as reasonable charge transport sites providing the high mobility. Varying end alkyl chains in such oligomers is suggested as a viable tool to tune the mobility.

Language: English

DOI: 10.1016/j.mencom.2019.03.035

	*Supplementary materials:*
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