N. N. Shlenskaya, A. S. Tutantsev, N. A. Belich, E. A. Goodilin, M. Graetzel, A. B. Tarasov, “Electrodeposition of porous CuSCN layers as hole-conducting material for perovskite solar cells”, Mendeleev Commun., 2018, Volume 28, Issue 4,Pages <nobr>378–380</nobr>

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Mendeleev Commun., 2018 Volume 28, Issue 4, Pages 378–380 (Mi mendc1772)

This article is cited in 10 papers

Communications

Electrodeposition of porous CuSCN layers as hole-conducting material for perovskite solar cells

N. N. Shlenskaya^a, A. S. Tutantsev^a, N. A. Belich^a, E. A. Goodilin^abc, M. Graetzel^d, A. B. Tarasov^ac

^a Department of Materials Science, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
^b N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow, Russian Federation
^c Department of Chemistry, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
^d Institute of Chemical Sciences and Engineering, Lausanne, Switzerland

Abstract: One of the most promising among hole-conducting materials, CuSCN, was prepared for the first time in a form of porous layers for potential applications in inverted perovskite solar cells.

Language: English

DOI: 10.1016/j.mencom.2018.07.012

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