V. I. Shtanov, T. B. Shatalova, L. V. Yashina, R. Ts. Bondokov, I. V. Saunin, “Growth of polycrystalline GeTe films on Pb1 – xSnxTe (x = 0, 0.05 or 0.2) and BaF2 substrates”, Mendeleev Commun., 2004, Volume 14, Issue 4,Pages 136

Growth of polycrystalline GeTe films on Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) and BaF₂ substrates

V. I. Shtanov^a, T. B. Shatalova^a, L. V. Yashina^a, R. Ts. Bondokov^b, I. V. Saunin^b

^a Department of Chemistry, M.V. Lomonosov Moscow State University, Moscow, Russian Federation
^b St. Petersburg Electrotechnical University 'LETI', St. Petersburg, Russian Federation

Abstract: Phase composition, microstructure and orientation were investigated for GeTe films grown on BaF₂ and Pb_{1 – x}Sn_xTe (x = 0, 0.05 or 0.2) substrates by hot wall epitaxy.

Language: English

DOI: 10.1070/MC2004v014n04ABEH001950