Numerical simulation of nucleation and migration voids in interconnects of electrical circuits

Problems of modeling of voids nucleation and migration in electrical circuits interconnects are considered. There is suggested a mathematical model of the processes based upon drift-diffuse approach. For the case of rectangular interconnection shape there are constructed monotone conservative numerical finite-difference schemes and developed implementation algorithms for PC and multiprocessor systems. Established approach is applied to the test problem. Numerical experiments show that constructed model adequately reflects all the physical processes and can be used for development of new chips.