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JOURNALS // Matematicheskoe modelirovanie // Archive
Matem. Mod., 1994 Volume 6, Number 9, Pages 68–78 (Mi mm1910)
Computational methods and algorithms

Problem of mathematical modelling of silicon oxidation

K. A. Volosov, L. B. Arkhipenko

Moscow Institute of Electronic Engineering

Abstract: In the paper a mathematical model of silicon oxidation is considered by using effective asymptotic methods. The well-known law of parabolic growth of oxide film is obtained.

Received: 10.05.1990
Revised: 14.10.1993



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