Selfconsistent compensated microfield model for strongly coupled plasma

The compensated microfield model of plasma non-ideality was proposed as the essential improvement of traditional microfield models. In this model double contribution of microfield in truncation of statistical sums was removed. The new method of truncation of statistical sums was compared with experiments, Debye model and other well-known models. It was found that only the microfield model explained experiments correctly. Calculations of Li and Hg ionizations were performed. Metalization of plasma — jump ionization growth process from 0 to 1 in the low temperature and normal density area — is described. Calculation of Hg vapour ionization describes well-known experiments of measurement of conductivity of this vapour.