Similation by Monte-Carlo method of electron transport in cristalline dielectrics charged under irradiation

Based on physical processes a mathematical model and a calculation algorithm of the electron transport in crystalline dielectrics charged under irradiation are developed. The model was approved for calculation of physical processes taking place in charged thin layers SiO2 under the electron bombardment. The results of calculation are in agreement with the experimental data and physical representation that suggest adequacy of proposed model.