Mathematical simulation of the optical вistability on the thermal nonlinearity of a semiconductor

The dynamic of the interaction of the light beam with the optical bistable semiconductor plate is discussed. The regime of the exploive absorbtion is obtained in the case of the optical thick plate. The effect of the localization of temperature field is investigated. Parameters values of the ligth beam and of the coefficient of the thermal conductivity are defined at which the bistability realizes. It is shown that the temperature dependence of the coefficient of the thermal conductivity influences significantly on the interaction between the optical beam and the semiconductor plate.