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JOURNALS // Matematicheskoe modelirovanie // Archive

Mat. Model., 2012 Volume 24, Number 12, Pages 23–28 (Mi mm3217)

This article is cited in 5 papers

On self-organization processes of nanostructures on semiconductor surface by ion bombardment

N. A. Kudryashov, P. N. Ryabov, T. E. Fedyanin

National Research Nuclear University MEPHI, Moscow, Russia

Abstract: The nanostructures self-organization process on semiconductor surfaces are considered. The mathematical model is formulated and numerical modeling of this process is carried out. The influence of high order terms on the evolution of surface morphology is studied. The defects of the surface morphology after oblique ion bombardment are classified.

Keywords: ion bombardment, dissipation, self-organization, nanostructure, substrate.

UDC: 532.592; 517.953

Received: 01.10.2012



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