The model of radiation-induced conductivity in silicon

The conduction current excited by the external flux of penetrating radiation is considered. Quantum kinetic equations for conduction electron and valence band hole distribution functions in phase space of position and quasi-momentum are used. Effective masses, group velocities, densities of states are determined on the base of band theory. The approximation of continuous energy losses due to scattering on lattice defects is carried out. The model is validated by the comparison with the experimental data on the average electron speed dependence on electric field strength and on speed of temperature transmission from electrons to lattice. The calculation of silicon radiation conductivity is carried out, the accordance of results with theoretical estimates is demonstrated.