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JOURNALS // Matematicheskoe modelirovanie // Archive

Matem. Mod., 2022 Volume 34, Number 2, Pages 58–70 (Mi mm4354)

This article is cited in 1 paper

Thermomechanical effects of radiation origin in microelectronics products

Yu. A. Volkova, M. Yu. Vyrostkovb, M. B. Markova, I. A. Tarakanova

a Keldysh Institute for Applied Mathematics of RAS
b National Research University ĞMoscow Power Engineering Instituteğ

Abstract: A mathematical model of the thermomechanical effect of penetrating radiation on a microelectronic product is presented. The model is based on the thermoelasticity equations, which are a consequence of the quantum kinetic equations for phonons. Heat transport is described by the law of conservation of energy and the Cattaneo equation, which takes into account the finite rate of heat propagation. Lattice vibrations are considered in the approximation of the linear theory of elasticity. In general, the model determines the distribution of temperature, energy flow, deformation and stress. Difference schemes have been developed for solving the model equations. The effectiveness of the developed model was tested by solving the problem of thermal shock.

Keywords: penetrating radiation, thermomechanical effect, thermoelasticity, phonons, thermal conductivity, difference scheme, thermal shock.

Received: 16.09.2021
Revised: 16.09.2021
Accepted: 08.11.2021

DOI: 10.20948/mm-2022-02-05


 English version:
Mathematical Models and Computer Simulations, 2022, 14:5, 727–735

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© Steklov Math. Inst. of RAS, 2024