Abstract:
TiO$_{2}$SiO$_{2}$ alternative thin films (stacks) were deposited on silicon substrates using sol-gel spin-coating techniques. The prepared samples had their corresponding optical properties analyzed by UV-Visible spectrophotometry (UV-Vis), X-ray diffractometry (XRD), a surface profilometer, and Raman spectroscopy. The optical and crystallization properties of thin films were varied and compared by changing the number of stacks. UV-Vis spectrum showed high reflectance and shifting towards the infrared region with effect of increased TiO$_{2}$/SiO$_{2}$ stacks. XRD spectra confirmed the existence of anatase TiO$_{2}$ and SiO$_{2}$ diffraction peaks. The multilayer film thickness was calculated at 109 and 151 nm at two and four stacks by a surface profilometer. The Raman spectra confirmed the Si-O-Si and TiO$_{2}$ stretching modes at 2600, 980, and 519 cm$^{-1}$. This investigation reveals the promising and effective UV-Visible reflective property of alternative TiO$_{2}$/SiO$_{2}$ thin films on a silicon substrate.