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JOURNALS // Nanosystems: Physics, Chemistry, Mathematics // Archive

Nanosystems: Physics, Chemistry, Mathematics, 2024 Volume 15, Issue 4, Pages 520–529 (Mi nano1296)

CHEMISTRY AND MATERIAL SCIENCE

Phase formation of nanosized InGaZnO$_4$ obtained by the sol-gel method with different chelating agents

Gleb M. Zirnikab, Alexander S. Chernukhaabc, Daniil A. Uchaevc, Ibrohimi A. Solizodaabd, Svetlana A. Gudkovaab, Nadezhda S. Nekorysnovaa, Denis A. Vinnikabc

a Moscow Institute of Physics and Technology, Dolgoprudny, Russia
b St. Petersburg State University, St. Petersburg, Russia
c South Ural State University, Chelyabinsk, Russia
d Tajik National University, Dushanbe, Tajikistan

Abstract: The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc oxide (IGZO), will make it possible to use it for the transistors manufacture using printing methods. The sol-gel method is one of the widely known and used methods for producing nano-sized oxide materials. As is known, a chelating reagent (complexing agent) can influence both the synthesis process and the final phase composition. The results of sol-gel synthesis with various chelating reagents: citric acid, ethylene glycol, oxalic acid, urea, glycerol and sucrose are presented. The samples were studied by X-ray diffraction. It was found that ethylene glycol and glycerol as chelating reagents make it possible to obtain a homogeneous crystalline material at 900$^\circ$C with a YbFe$_2$O$_4$-type structure, R-3m (166) space group. Unit cell parameters and crystallite size (Halder–Wagner method) for InGaZnO$_4$ single-phase samples were calculated.

Keywords: indium-gallium-zinc oxide, In–Ga–Zn–O, IGZO, sol-gel method, complexing agent, chelating reagent, phase formation, nanomaterial.

Received: 07.06.2024
Accepted: 08.08.2024

Language: English

DOI: 10.17586/2220-8054-2024-15-4-520-529



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© Steklov Math. Inst. of RAS, 2024