Thermal and magnetic properties and density of state of in 3D SnTe (001) surface state under combined exchange and strain effects

This paper presents a comprehensive investigation of the essential properties of topological insulator materials like electronic, thermal, and magnetic quantities. We considered crystalline topological insulators tin telluride (SnTe), deposited on a magnetic substrate material. The anisotropic mass Hamiltonian is considered to obtain eigenenergy spectra expression in the presence of exchange proximity and strain effects. We showed that the strain has an important effect in shifting the position of the valley or Dirac points in the reciprocal space; an important result that leads to significant role in using the topological material as an electronic component in the new hot research area called valley electronics. We displayed the dependences of the computed density of states, heat capacity, and the magnetic susceptibility of the crystalline topological material, SnTe, on the Hamiltonian physical parameters.