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JOURNALS // Nanosystems: Physics, Chemistry, Mathematics // Archive

Nanosystems: Physics, Chemistry, Mathematics, 2025 Volume 16, Issue 5, Pages 660–668 (Mi nano1407)

CHEMISTRY AND MATERIAL SCIENCE

Effect of rotational speed on structural, morphological, and optical properties of solgel spin coated Sb doped SnO$_2$ thin films

D. Subramanyamab, B. Rajesh Kumarc, K. Chandrasekhara Reddyad

a Research and Development Centre, Bharathiar University, Coimbatore, 641046, Tamil Nadu, India
b Department of Physics, STSN Govt Degree College, Kadiri, 515591, Andhra Pradesh, India
c Department of Physics, School of Science, GITAM (Deemed to be University), Visakhapatnam, 530 045, Andhra Pradesh, India
d Department of Physics, Govt. Degree College, Uravakonda, 515812, Anantapur, Andhra Pradesh, India

Abstract: Antimony doped SnO$_2$ (ATO) films were prepared on glass substrates by spin coating method at rotational speeds from 2000 to 3500 rpm. The impact of rotational speed on physical properties of Sb-doped SnO$_2$ films were reported. XRD profiles of Sb-doped SnO$_2$ films exhibits tetragonal rutile phase structure. The surface morphology shows homogeneous growth of the films with spherical structure, and an agglomeration of grains was observed at higher rotational speeds. Sb-doped SnO$_2$ films prepared at 3500 rpm show an optimum transmittance of 82% at visible region. The optical bandgap energy of Sb-doped SnO$_2$ films were increased from 3.23 to 3.46 eV due to Burstein–Moss (B–M) effect. The electrical resistivity of Sb-doped SnO$_2$ films were increased from 2.80 $\cdot$ 10$^{-4}$ to 3.86 $\cdot$ 10$^{-4}$ $\Omega$ $\cdot$ cm with an increase of rotational speed from 2000 to 3500 rpm. KEYWORDS Sb-doped SnO$_2$ films, X-ray diffraction, surface morphology, optical properties, electrical properties

Keywords: Sb-doped SnO$_2$ films, X-ray diffraction, surface morphology, optical properties, electrical properties.

Received: 10.04.2025
Revised: 05.09.2025
Accepted: 06.10.2025

Language: English

DOI: 10.17586/2220-8054-2025-16-5-660-668



© Steklov Math. Inst. of RAS, 2025