O. V. Kononenko, V. N. Matveev, D. P. Field, D. V. Matveev, S. I. Bozhko, D. V. Roshchupkin, E. E. Vdovin, A. N. Baranov, “Investigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni films”, Nanosystems: Physics, Chemistry, Mathematics, 2014, Volume 5, Issue 1,Pages <nobr>117

Investigation of structure and transport properties of graphene grown by low-pressure no flow CVD on polycrystalline Ni films

O. V. Kononenko^a, V. N. Matveev^a, D. P. Field^b, D. V. Matveev^c, S. I. Bozhko^c, D. V. Roshchupkin^a, E. E. Vdovin^a, A. N. Baranov^d

^a Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
^b School of Mechanical and Materials Engineering, Washington State University, Pullman, WA
^c Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Russia
^d Moscow State University, Moscow, Russia

Abstract: Graphene films were synthesized by the low-pressure no flow CVD on polycrystalline nickel catalyst films grown by the self-ion assisted deposition technique at different biases. Graphene films were transferred to a SiO$_{2}$/Si substrate using PMMA. The graphene grown on Ni films with bimodal grain size distribution and weaker (111) texture had higher thickness uniformity and a lower number of graphene layers. The graphene grown on Ni films with a monomodal grain size distribution and stronger (111) texture had lower thickness uniformity and a higher number of graphene layers. The transport properties of the graphene films were investigated with the aid of Hall measurements.

Keywords: graphene, СVD synthesis, electronic properties.

PACS: 68.65.Pq; 81.05.ue; 73.50.Jt

Language: English