Pulsed laser annealing of silicon implanted with manganese ions

This work describes a technique for pulsed laser annealing of silicon preliminarily hyperdoped with manganese atoms using ion implantation. Optimal laser annealing regimes were selected which provided the best crystallinity of the samples. In this work the influence of pulsed laser annealing on some optical and structural properties of hyperdoped silicon wafers was also analyzed through studies of Raman spectra, studies of the atomic composition of the material using energy-dispersive X-ray spectroscopy, as well as studies of infrared absorption spectra in the wavenumber range from 700 cm$^{-1}$ to 1300 cm$^{-1}$.