Handling of InGaAs quantum well parameters in the active region of near-IR LEDs (850–960 nm)

The flexible control of the radiation wavelength of In$_x$Ga$_{1-x}$As/Al$_{0.3}$Ga$_{0.7}$As multiple quantum wells for active area of near-IR LEDs (850–960 nm) has been experimentally demonstrated by changing their thickness and composition $x$. Heterostructures with multiple quantum wells demonstrating high photoluminescence intensity have been obtained using the MOVPE technique. Due to a unified post-growth technology of transferring heterostructures to a carrier-substrate and identical installation procedures, the manufactured LEDs demonstrated close electro-optical characteristics: efficiency from 50 to 54% and external quantum efficiency from 48 to 50%.