Thermal resistance of LEDs based on a narrow-gap InAsSb solid solution

This paper examines the thermal resistance of the mid-infrared “flip-chip” LEDs based on the $p$-InAsSbP/$n$-InAsSb heterostructure. It was shown that the measurement of thermal resistance via a thermal control unit (forward $p$–$n$ junction voltage) for LEDs based on narrow-gap semiconductors must be carried out at low temperature when thermal control unit is constant.