Longwave ($\lambda_{0.1}$ = 10 $\mu$m, 296 K) infrared photodetectors based on InAsSb$_{0.38}$ solid solution

Photodetectors based on diode heterostructure with InAsSb$_x$ photosensitive region ($x$ = 0.38) with long-wave cut-off $\lambda_{0.1}$ about 10 $\mu$m (296 K) are investigated. The dependences of dark current density and detectivity in the temperature range of 200–425 K have been investigated. It is shown that the experimental samples are characterized by values of dark current density about 500 A/cm$^2$ at room temperature, detectivity 1.2$\cdot$10$^9$ and 5$\cdot$10$^9$ сmHz$^{1/2}$W$^{-1}$ at room temperature and 250 K, respectively, and diffusion mechanism of current flow in the temperature range 200–350 K.