Impurity composition and cathodoluminescence of type IIb HPHT diamond with boron concentration up to 60 ppm

A single-crystal multi-sector plate of type IIb HPHT diamond was studied using local cathodoluminescence (CL) at a temperature of 77 K and IR spectroscopy. The features of the CL growth sectors (100), (110), (113), (111) of diamond grown using the HPHT technology were studied. In the luminescence of the band with a maximum of 2.3 eV in each of the growth sectors, two components with different decay times, located in the ranges of 2–11 $\mu$s and 19–96 $\mu$s, were detected. The decay time of the band with a maximum of 3.0 eV is less than 100 ns. It is shown that each growth face is a separate luminescent material with its own characteristic CL properties.