RUS  ENG
Full version
JOURNALS // Optics and Spectroscopy // Archive

Optics and Spectroscopy, 2024 Volume 132, Issue 12, Pages 1236–1239 (Mi os1566)

International Physics Conference.St. Petersburg, October 21-25, 2024, St. Petersburg
Optical materials

Near-field radiation and the effect of non-uniformity of current density distribution in AlInGaN micro-leds

A. L. Zakhgeima, A. E. Ivanovab, A. E. Chernyakova, L. A. Aleksanyanc, A. Ya. Polyakovc

a Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
b Saint Petersburg Electrotechnical University "LETI", St. Petersburg, Russia
c National University of Science and Technology «MISIS», Moscow, Russia

Abstract: The object of study in this work was the rapidly developing micro-LEDs based on AlGaInN nanoheterostructures, which have high electroluminescent characteristics and open up new application possibilities. A study of near-field radiation with high spatial resolution (mapping) revealed high current density inhomogeneity over a wide range of excitation levels, namely, the concentration of light and current in the annular region adjacent to the side surface of the mesa. Taking this effect into account, the concept of “effective” current density is introduced, and the current dependences of energy characteristics are analyzed, including optical power saturation and efficiency droop.

Keywords: AlInGaN, mesostructure, micro-led, electroluminescence, near-field radiation, quantum efficacy.

Received: 21.05.2024
Revised: 24.07.2024
Accepted: 30.10.2024

DOI: 10.61011/OS.2024.12.59800.6579-24



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025