Photoinduced charge transfer in layered 2D PbSe–MoS$_2$ nanostructures

Semiconductor 2D nanostructures are a new platform for the creation of modern optoelectronic devices. Layered 2D PbSe–MoS$_2$ nanostructures with efficient photoinduced charge transfer from PbSe nanoplatelets (NPLs) to MoS$_2$ were created. When PbSe NPLs with short organic ligands are deposited onto a thin layer of MoS$_2$ NPLs, a decrease in their photoluminescence intensity and a decrease in the average photoluminescence lifetime are observed. When a layered 2D PbSe–MoS$_2$ nanostructure is illuminated with IR radiation, a photocurrent appears, which indicates the contribution of PbSe NPLs to the electrical response of the system. Ultrathin layers of transition metal dichalcogenides sensitized with nanostructures based on lead chalcogenides can be used in photodetectors with a spectral sensitivity region extended to the near-IR range.