N. V. Kryzhanovskaya, A. S. Dragunova, S. D. Komarov, A. M. Nadtochiy, A. G. Gladyshev, A. V. Babichev, A. V. Uvarov, V. V. Andryushkin, D. V. Denisov, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, A. Yu. Egorov, “Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements”, Optics and Spectroscopy, 2021, Volume 129, Issue 2,Pages <nobr>218

This article is cited in 1 paper

Optics of low-dimensional structures, mesostructures, and metamaterials

Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements

N. V. Kryzhanovskaya^a, A. S. Dragunova^b, S. D. Komarov^bc, A. M. Nadtochiy^b, A. G. Gladyshev^a, A. V. Babichev^a, A. V. Uvarov^b, V. V. Andryushkin^a, D. V. Denisov^d, E. S. Kolodeznyi^a, I. I. Novikov^a, L. Ya. Karachinsky^a, A. Yu. Egorov^d

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Electrotechnical University "LETI"
^d Connector Optics LLC, St. Petersburg

Abstract: Photoluminescence spectroscopy (PL) has been used to study the optical properties of three-dimensional quantum-sized InGaPAs islands formed by substituting phosphorus by arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. PL line of the formed array of islands is in the range of 950–1000 nm at room temperature. Studies of PL in the temperature range 78–300 K indicate a significant inhomogeneity of the island array, the presence of nonradiative recombination centers, and carrier transport between islands. We observe in the photoluminescence excitation spectra a line associated with absorption in the residual two-dimensional InGaPAs layer. Annealing of the structures results in 300% increase of the PL intensity at room temperature with an insignificant short-wavelength shift of the island PL line, and also in improvement of the homogeneity within the island array.

Keywords: Quantum dots, gallium arsenide, phosphorus substitution, photoluminescence.

Received: 14.10.2020
Revised: 14.10.2020
Accepted: 30.10.2020

DOI: 10.21883/OS.2021.02.50561.263-20