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Optics and Spectroscopy, 2021 Volume 129, Issue 11, Pages 1360–1365 (Mi os23)

Spectroscopy and physics of atoms and molecules

Dissociative recombination in the afterglow of low-pressure barrier discharge. Population of $2p^{5}3d$ atoms

V. A. Ivanov

Saint Petersburg State University

Abstract: The decaying neon plasma produced by the dielectric barrier discharge (DBD) in a cylindrical tube at a pressure of 0.1–40 Torr has been spectroscopically investigated to analyze the dissociative recombination (DR) of molecular ions with electrons as a mechanism for the formation of excited atoms. It is shown that, at the electron density in the afterglow less than 5$\cdot$10$^{10}$ cm$^{-3}$ the DR is the dominant source of population of $3d$ levels at pressures $P_{\mathrm{Ne}}\ge$ 0.6 Torr. At lower pressures, the optical properties of the decaying plasma are formed to a greater extent by the collisional-radiative recombination of Ne$^+$ ions. A significant variation of the relative intensities of the $3d\to3p$ transition lines in the afterglow with a change in gas pressure was found, reflecting the effect of inelastic collisions on the formation of the spectrum of decaying plasma in the near infrared region. From measurements carried out at a pressure of 0.6 Torr, the relative values of the partial DR coefficients for the $3d_{j}$ levels of the neon atom were found. Comparison of these data with measurements in the near ultraviolet region, containing the lines of $4p\to3s$ transitions, indicates the need to take into account the cascade $4p\to3d$ transitions to correctly solve the problem of the final products of dissociative recombination.

Keywords: dielectric-barrier discharge, low-pressure plasma, optical emission spectroscopy, dissociative recombination, molecular ions, collisional-radiative recombination, cascade transitions.

Received: 15.04.2021
Revised: 14.05.2021
Accepted: 06.09.2021

DOI: 10.21883/OS.2021.11.51633.2177-21


 English version:
Optics and Spectroscopy, 2022, 130:14, 2082–2087

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© Steklov Math. Inst. of RAS, 2024