V. S. Nozdrin, S. V. Chuchupal, G. A. Komandin, V. N. Kurlov, O. E. Porodinkov, I. E. Spektor, G. M. Katyba, P. G. Schunemann, K. T. Zawilski, “The influence of defects on the absorption of terahertz radiation in a CdSiP<nobr>$_{2}$</nobr> single crystal”, Optics and Spectroscopy, 2020, Volume 128, Issue 7,Pages <nobr>998

This article is cited in 2 papers

UV, IR, and terahertz optics

The influence of defects on the absorption of terahertz radiation in a CdSiP$_{2}$ single crystal

V. S. Nozdrin^a, S. V. Chuchupal^ab, G. A. Komandin^a, V. N. Kurlov^c, O. E. Porodinkov^a, I. E. Spektor^a, G. M. Katyba^acd, P. G. Schunemann^e, K. T. Zawilski^e

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Faculty of Physics, Lomonosov Moscow State University
^c Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^d Bauman Moscow State Technical University
^e BAESystems, Inc., USA

Abstract: The transmission and reflection spectra of a CdSiP$_{2}$ single crystal are measured in the temperature interval from 80 to 300 K using the terahertz (THz) pulsed and infrared Fourier spectroscopy methods. A significant influence of postgrowth defects on the absorption in the THz frequency range is revealed. This absorption is found to depend weakly on temperature compared to that observed previously for other chalcopyrite crystal with substantially lower concentration of defects. Upon cooling, intrinsic absorption mechanisms are minimized, and the contribution of defects to absorption is separated.

Keywords: terahertz radiation generation, nonlinear optical crystals, extrinsic absorption.

Received: 20.12.2019
Revised: 22.01.2020
Accepted: 28.02.2020

DOI: 10.21883/OS.2020.07.49573.27-20