A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 2020, Volume 128, Issue 3,Pages <nobr>399

Optics of low-dimensional structures, mesostructures, and metamaterials

The use of films of multilayer graphene as coatings of light-emitting GaAs structures

A. V. Alaferdov^abc, O. V. Vikhrova^a, Yu. A. Danilov^a, B. N. Zvonkov^a, S. A. Moshkalev^bd

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Center for Semiconducting Components and Nanotechnologies, Brazil
^c The "Gleb Wataghin" Institute of Physics, University of Campinas, Brazil
^d Universidade Estadual de Campinas, Brazil

Abstract: A significant (almost two orders of magnitude) increase in the intensity of photo- and electroluminescence of a diode structure with an InGaAs/GaAsSb/GaAs quantum well, GaMnAs layer as a spin injector, and contact coating of a multilayer graphene film has been experimentally detected. The result has been explained by the possible formation of a hybrid system of multilayer graphene and GaAs semiconductor under the influence of He–Ne laser radiation, which leads to a change in the band diagram of the heterostructure.

Keywords: light-emitting structure, GaAs, quantum well, multilayer graphene.

Received: 06.11.2019
Revised: 06.11.2019
Accepted: 26.11.2019

DOI: 10.21883/OS.2020.03.49067.300-19