L. Ya. Karachinsky, I. I. Novikov, A. V. Babichev, A. G. Gladyshev, E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, Yu. K. Bobretsova, A. A. Klimov, D. V. Denisov, K. O. Voropaev, A. S. Ionov, V. E. Bugrov, A. Yu. Egorov, “Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice”, Optics and Spectroscopy, 2019, Volume 127, Issue 6,Pages <nobr>963–966</nobr>

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Optics and Spectroscopy, 2019 Volume 127, Issue 6, Pages 963–966 (Mi os524)

This article is cited in 14 papers

Laser physics and laser optics

Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice

L. Ya. Karachinsky^a, I. I. Novikov^b, A. V. Babichev^b, A. G. Gladyshev^b, E. S. Kolodeznyi^b, S. S. Rochas^b, A. S. Kurochkin^b, Yu. K. Bobretsova^c, A. A. Klimov^c, D. V. Denisov^d, K. O. Voropaev^ef, A. S. Ionov^f, V. E. Bugrov^b, A. Yu. Egorov^b

^a Connector Optics LLC, 194292, St. Petersburg, Russia
^b ITMO University, 197101, St. Petersburg, Russia
^c Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
^d St. Petersburg Electrotechnical University, 197376, St. Petersburg, Russia
^e Yaroslav-the-Wise Novgorod State University, 173003, Veliky Novgorod, Russia
^f JSC OKB-Planeta, Velikii Novgorod, OKB-Planeta, 173004, Veliky Novgorod, Russia

Abstract: An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.

Keywords: molecular beam epitaxy, vertical-cavity surface-emitting laser, heterostructure, active area, quantum well, superlattice.

Received: 21.03.2019
Revised: 19.08.2019
Accepted: 20.08.2019

DOI: 10.21883/OS.2019.12.48693.124-19

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English version: Optics and Spectroscopy, 2019, 127:6, 1053–1056

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