RUS  ENG
Full version
JOURNALS // Optics and Spectroscopy // Archive

Optics and Spectroscopy, 2021 Volume 129, Issue 10, Pages 1331–1335 (Mi os53)

Applied optics

Induced stress arising in crystalline silicon under exposure to ultra-short laser pulses of different duration in air and water

N. A. Smirnov, S. I. Kudryashov, N. N. Mel'nik, P. M. Papilova, I. A. Sherstnev, A. A. Ionin, J. Chen

P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: The silicon surface was modified in a single-pulse mode with femto-picosecond laser pulses (0.3 and 10 ps) in the near-IR range (1030 nm) during ablation in air and water. The resulting structures were studied using Raman microscopy. In the course of the study, it was found that nanocrystallites with a size of 7–8 nm appear at the crater boundary. Local mechanical stresses were found in the center of the crater, the sign of which depends on the applied energy density. The highest local compressive stresses arise in water in the subfilamentation mode at maximum energy densities.

Keywords: silicon, Raman spectroscopy, ultrashort pulses, single-pulse ablation in air and liquid, local stresses.

Received: 08.06.2021
Revised: 23.06.2021
Accepted: 25.06.2021

DOI: 10.21883/OS.2021.10.51501.2399-21


 English version:
Optics and Spectroscopy, 2022, 130:13, 2049–2052

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025