A. N. Kosarev, V. V. Chaldyshev, A. A. Kondikov, T. A. Vartanyan, N. A. Toropov, I. A. Gladskikh, P. V. Gladskikh, I. Akimov, M. Bayer, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles”, Optics and Spectroscopy, 2019, Volume 126, Issue 5,Pages 573

This article is cited in 5 papers

Optics of low-dimensional structures, mesostructures, and metamaterials

Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles

A. N. Kosarev^abc, V. V. Chaldyshev^acd, A. A. Kondikov^ad, T. A. Vartanyan^d, N. A. Toropov^d, I. A. Gladskikh^d, P. V. Gladskikh^d, I. Akimov^ab, M. Bayer^ab, V. V. Preobrazhenskii^e, M. A. Putyato^e, B. R. Semyagin^e

^a Ioffe Institute, St. Petersburg
^b Experimentelle Physik II, Universität Dortmund, Dortmund, Germany
^c Peter the Great St. Petersburg Polytechnic University
^d St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.

Received: 27.12.2018
Revised: 27.12.2018
Accepted: 09.01.2019

DOI: 10.21883/OS.2019.05.47655.382-18