A. V. Babichev, D. V. Denisov, P. Lavenus, G. Jacopin, M. Tchernycheva, F. H. Julien, H. Zhang, “Electroluminescence of single InGaN/GaN micropyramids”, Optics and Spectroscopy, 2019, Volume 126, Issue 2,Pages <nobr>180

This article is cited in 1 paper

Physical optics

Electroluminescence of single InGaN/GaN micropyramids

A. V. Babichev^a, D. V. Denisov^bc, P. Lavenus^de, G. Jacopin^f, M. Tchernycheva^de, F. H. Julien^de, H. Zhang^def

^a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Electrotechnical University "LETI"
^d Université Paris-Sud, Orsay
^e Univ. Paris Saclay, Orsay, France
^f École Polytechnique Fédérale de Lausanne

Abstract: The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520–590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

Received: 17.05.2018
Revised: 19.10.2018

DOI: 10.21883/OS.2019.02.47201.130-18