V. V. Malyutina-Bronskaya, А. М. Polikanin, V. B. Zalesskiy, A. V. Semchenko, V. V. Sidsky, V. E. Gayshun, “Synthesis of heterostructures SiO<nobr>$_2$</nobr>/ZnO/Si by sol-gel method”, PFMT, 2011, Issue 3(8),Pages <nobr>24

PHYSICS

Synthesis of heterostructures SiO$_2$/ZnO/Si by sol-gel method

V. V. Malyutina-Bronskaya^a, А. М. Polikanin^a, V. B. Zalesskiy^a, A. V. Semchenko^b, V. V. Sidsky^b, V. E. Gayshun^b

^a B. I. Stepanov Institute of Physics NASB, Minsk
^b F. Skorina Gomel State University, Gomel

Abstract: The analysis of voltage-current and voltage-farad characteristic of SiO$_2$/ZnO/Si-structures are described. SiO$_2$/ZnO/Si structures are synthesized by sol-gel metrod with using of zinc nitrate, chloride and acetate as initials. The defects density on the ZnO/Si boundary by Mott-Shottky relationship С$_2$(U) is calculated. The main conductivity mechanism (space-charge limited current) is determined. It is shown that sol-gel films synthesized from zinc acetate have good photosensitivity.

Keywords: sol-gel, ZnO, voltage-current and voltage-farad characteristic.

UDC: 538.915; 681.7.064

Received: 02.09.2011