Abstract:
The effect of additional annealing in vacuum on the structure, electrical and optical properties of ZnO:Al films synthesized by
sol-gel method is determined. Additional annealing in vacuum at the temperature of 350$^\circ$ Ñ leads to the increasing of the content of the crystalline phase in the films. There significant decreasing of the widths of the forbidden gap is observed, which is in
good agreement with the data of previous studies of the structural properties of ZnO:Al films.