Abstract:
The article presents the results of studies of the dielectric characteristics of tantalum oxide films deposited by reactive magnetron sputtering of a Ta target in an Ar/O$_2$ gas mixture. Dependencies of dielectric constant, dielectric loss tangent, band gap, leakage current density on oxygen content in Ar/O$_2$ gas mixture during film deposition were established. Films with a dielectric constant of $12$–$30$ units, a dielectric loss tangent of $0.01$, a leakage current density of less than $0.1$ A/cm$^2$ at an electric field strength of $2.0\cdot 10^6$ V/cm, and band gap of $4.5$–$4.85$ eV, were obtained.
Keywords:tantalum oxide, reactive magnetron sputtering, MOS structure, dielectric properties.