Electrical properties of SiO$_2$:Cu$^\circ$ thin films produced by pulse laser deposition

The data on the electrical properties of SiO$_2$:Cu$^\circ$ films are presented. The dependence of voltage on the solar irradiation intensity is presented. It was revealed that at increase in copper ions concentration in the thin films of SiO$_2$:Cu$^\circ$ their electrical conductivity is decreasing due to the increase of the distance between the nanoparticles of copper distributed in the dielectric matrix of SiO$_2$. The films have the non-linear VA characteristic with the parts of voltage limits at the range of $7\dots 10$ V. At the same time, the photoelectric response was caused by generation of voltage of the order of temperature potential with the evident dependence on the solar irradiation. That means the possibility of the films application as the irradiation sensors.