Peculiarity of reactive magnetron deposition of tantalum oxide films with different methods of gas supply into the chamber

The processes of reactive magnetron sputtering of a Ta target in an Ar/O$_2$ gas mixture have been studied. The dependences of the discharge voltage, deposition rate, electrical and physical characteristics of tantalum oxide films on the method of gases supply and oxygen concentration in the Ar/O$_2$ gas mixture are established. It has been established that the metallic, transition and reactive modes of the sputtering system operation are determined by the change in the rate of film deposition. Regardless of the method of the working gases supply, the initial formation of dielectric tantalum oxide films with low optical absorption is observed in the transition mode of the system operation.