Modeling of ir radiation influence on the phase composition of silicon dioxide coatings

Mathematical modeling of the interaction of radiation in the near infrared range with a coating of silicon dioxide was carried out at a pulse duration $\tau = 0,05$–$0,5$ seconds and exposure $E = 0,1$ to $1,0$ J/cm$^2$. An estimate is made of the decrease in the rate of plasma-chemical etching of a SiO$_2$ coating due to an increase in the average binding energy in the crystal lattice due to thermal modification of the phase composition of the specified coating.