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Fizika i Tekhnika Poluprovodnikov, 1985 Volume 19, Issue 1, Pages 38–43 (Mi phts1017)

Determination of Recombination Activity and Depth of Occurence of Point Defects in Semiconductor Crystals by the Method of Induced Current in a Scanning Electron Microscope

M. G. Mil'vidskii, V. B. Osvenskii, V. Ya. Reznik, A. N. Shershakov




© Steklov Math. Inst. of RAS, 2024