E. N. Mokhov, E. E. Goncharov, G. G. Ryabova, “Boron Diffusion in <nobr>$p$</nobr>-Type Silicon Carbide”, Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 1,Pages <nobr>49

JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1984 Volume 18, Issue 1, Pages 49–53 (Mi phts1550)

Boron Diffusion in $p$-Type Silicon Carbide

E. N. Mokhov, E. E. Goncharov, G. G. Ryabova

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

UDC: 621.315.592

Received: 05.04.1983
Accepted: 16.06.1983