Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

P. S. Kop'ev, B. Ya. Ber, S. V. Ivanov, N. N. Ledentsov, B. Ya. Mel'tser, V. M. Ustinov

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad

UDC: 621.315.592

Received: 09.08.1983
Accepted: 29.08.1983