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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1984 Volume 18, Issue 3, Pages 402–407 (Mi phts1640)

To the Determination of Recombination Rate at the Interface of Si$_{x}$Ge$_{1-x}{-}$GaAs Heterojunctions

O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, N. N. Soldatenko, Yu. A. Tkhorik

Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR

UDC: 621.315.592

Received: 05.07.1983
Accepted: 02.09.1983



© Steklov Math. Inst. of RAS, 2024