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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1984 Volume 18, Issue 4, Pages 619–623 (Mi phts1692)

Properties of $p$-Si${-}n$-GaAs Heterojunctions Produced by the Method of Laser Vacuum Epitaxy

V. A. Budyanu, I. A. Damaskin, V. P. Zenchenko, A. A. Nasakin, S. L. Pyshkin, S. A. Fedoseev, S. N. Chechui

Institute of Applied Physics Moldavian Academy of Sciences, Kishinev

UDC: 621.315.592

Received: 26.07.1983
Accepted: 03.11.1983



© Steklov Math. Inst. of RAS, 2024