Formation and Temperature Stability of Defects in Near-to-Surface Si Layer of Si$-$SiO$_2$ Structures Implanted by Tl Ions

E. A. Bobrova, V. S. Vavilov, Yu. D. Vulis, G. N. Galkin, V. V. Pospelov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow

UDC: 621.315.592

Received: 23.11.1983
Accepted: 29.11.1983