G. G. Kovalev, V. N. Sokolov, “Radiation-Induced Defects in Silicon due to Boron- and Helium-Ion Doping”, Fizika i Tekhnika Poluprovodnikov, 1984, Volume 18, Issue 6,Pages <nobr>1087

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Fizika i Tekhnika Poluprovodnikov, 1984 Volume 18, Issue 6, Pages 1087–1088 (Mi phts1805)

Short Notes

Radiation-Induced Defects in Silicon due to Boron- and Helium-Ion Doping

G. G. Kovalev, V. N. Sokolov

Leningrad Shipbuilding Institute

UDC: 621.315.592

Received: 11.11.1983
Accepted: 17.11.1983

Fulltext: PDF file (289 kB)