Short Notes

Recombination Properties of Radiation-Induced Defects in Transniutationally Doped Silicon

I. I. Kolkovskii, P. F. Lugakov, V. V. Shusha

A. N. Sevchenko Research Institute of Applied Physical Problems, Belarusian State University, Minsk

UDC: 621.315.592

Received: 16.10.1985
Accepted: 14.12.1985