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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 1986 Volume 20, Issue 1, Pages 182–184 (Mi phts42)

Short Notes

Effect of Trapping Levels on the Recombination of Excess Carriers in Silicon

V. A. Zhitov, A. V. Kudinov, V. A. Milyaev, V. A. Nikitin, A. M. Prokhorov, A. V. Shirkov

General Physics Institute of the Academy of Sciences of the USSR, Moscow

Received: 24.07.1985
Accepted: 01.08.1985



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